A considerable increase in the base current (IB) and decrease in the hFE, gm and collector saturation current (ICSat) were observed after irradiation in the case of the NPN transistor. The different electrical characteristics of N-channel MOSFETs such as threshold voltage (Vth), density of interface trapped charges (ΔNit), density of oxide trapped charges (ΔNot), transconductance (gm), mobility (µ) and drain saturation current (IDSat) were studied systematically before and after irradiation in the same dose ranges. The different electrical characteristics of the NPN transistor such as Gummel characteristics, excess base current (ΔIB), dc current gain (hFE), transconductance (gm), displacement damage factor (K) and output characteristics were studied as a function of total dose.
NPN transistors and N-channel depletion metal oxide semiconductor field effect transistors ( MOSFETs) were irradiated with 5 MeV protons and 60Co gamma radiation in the dose ranging from 1 Mrad(Si) to 100 Mrad(Si). In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain.Ĭomparison of effect of 5 MeV proton and Co-60 gamma irradiation on silicon NPN rf power transistors and N-channel depletion MOSFETs
In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. This model is shown to agree with the experimental trends.Ĭomparison between the effects of positive noncatastrophic HMB ESD stress in n-channel and p-channel power MOSFET's A previously reported analytical model that describes the SEB mechanism is updated to include temperature variations. Experimental data are presented which indicate that the SEB susceptibility of the power MOSFET decreases with increasing temperature. The temperature dependence of single-event burnout (SEB) in n-channel power metal-oxide-semiconductor field effect transistors ( MOSFET's) is investigated experimentally and analytically. L_ dependence of single-event burnout in n-channel power MOSFET's Object.keys(l_mcd.basemaps).forEach(function (item) ) Var l_olayer= // supplementary region layer Relationship of Zircon Group to other Species Hide _symmetry_space_group_name_H-M 'I 41/a m d' X-ray studies of synthetic coffinite, thorite and uranothorites _journal_name_full 'American Mineralogist' Skakle J M S, Dickson C L, Glasser F P (2000) The crystal structures of CeSiO4 and Ca2Ce8(SiO4)6O2 Powder Diffraction 15 234-238ĬIF Raw Data - click here to close data_global Schluter J, Malcherek T, Husdal T A (2009) The new mineral stetindite, CeSiO4, a cerium end-member of the zircon group Neues Jahrbuch fur Mineralogie, Abhandlungen 186 195-200 _cod_database_code 1011265 Mineralogical Magazine 21 176-187 Interscience Publishers, New York, New York Sample at 1123 K Body centered cubic, bcc, structure Crystal Structures 1 7-83īinks W (1926) The crystalline structure of zircon. Interscience Publishers, New York, New York Hexagonal closest packed, hcp, structure Crystal Structures 1 7-83 _cod_database_code 1011263 Zeitschrift fur Kristallographie 66 73-102 Wyckoff W, Hendricks S (1927) Die Kristallstruktur von Zirkon und die Kriterien fur spezielle Lagen in tetragonalen Raumgruppen. Kolesov B A, Geiger C A, Armbruster T (2001) The dynamic properties of zircon studied by single-crystal X-ray diffraction and Raman spectroscopy European Journal of Mineralogy 13 939-948 A single-crystal X-ray study of xenotime substitution American Mineralogist 86 681-689 Hazen R M, Finger L W (1979) Crystal structure and compressibility of zircon at high pressure American Mineralogist 64 196-201įinch R J, Hanchar J M, Hoskin P W O, Burns P C (2001) Rare-earth elements in synthetic zircon: Part 2. 1, 1 atm - before P American Mineralogist 64 196-201 Hazen R M, Finger L W (1979) Crystal structure and compressibility of zircon at high pressure crystal No. Robinson K, Gibbs G V, Ribbe P H (1971) The structure of zircon: A comparison with garnet American Mineralogist 56 782-790 Taylor M, Ewing R C (1978) The crystal structure of the ThSiO4 polymorphs: huttonite and thorite Acta Crystallographica B34 1074-1079 Speer J A, Cooper B J (1982) Crystal structure of synthetic hafnon, HfSiO4, comparison with zircon and the actinide orthosilicates American Mineralogist 67 804-808 Fuchs L H, Gebert E (1958) X-ray studies of synthetic coffinite, thorite and uranothorites American Mineralogist 43 243-248
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